Description
Specifications Table
Product Name – Ammonium hydroxide VLSI
Quantity/Pack Size – 8 pt (2.36 L) / 16 pt (4.73 L) / 32 pt (9.46 L)
Form – Liquid solution (28-30% NH₃ in water)
Grade – VLSI (Very Large Scale Integration) grade
Application – Semiconductor manufacturing, wafer cleaning, photoresist development
Product Overview
This VLSI-grade ammonium hydroxide solution is engineered for critical semiconductor applications where ultra-low metal contamination is non-negotiable. With a tightly controlled ammonia concentration of 28-30% by weight, this solution maintains consistent performance across photolithography and wet etching processes. The solution undergoes rigorous filtration through 0.05µm membranes and is packaged in Class 100 cleanroom conditions to prevent particulate contamination. Its metal impurity profile is strictly maintained below 5 parts per billion for critical elements like sodium, potassium, calcium, and iron, ensuring compatibility with advanced semiconductor fabrication nodes. The solution’s high purity prevents defect formation during wafer cleaning and photoresist stripping, while its balanced pH profile minimizes surface roughness on silicon substrates. Packaged in HDPE bottles with PTFE-lined caps to prevent leaching, this ammonium hydroxide solution offers a 12-month shelf life when stored at 15-25°C in its original sealed container. The solution’s consistent batch-to-batch performance is verified through ICP-MS analysis, with certificates of analysis provided for each production lot.
FAQs
1. What is the typical metal impurity profile for this VLSI-grade ammonium hydroxide?
The solution maintains metal impurities below 5 ppb for critical elements including sodium, potassium, calcium, iron, copper, zinc, and chromium, with most transition metals maintained below 1 ppb.
2. How does the packaging prevent contamination during storage?
The solution is packaged in HDPE bottles with PTFE-lined caps that prevent ion leaching, while the bottles themselves are manufactured in a Class 100 cleanroom environment and undergo particle rinsing before filling.
3. What filtration process is used for this solution?
The ammonium hydroxide undergoes sequential filtration through 0.2µm and 0.05µm membranes in a closed-system process to eliminate particulate contamination down to sub-micron levels.
4. Can this solution be used for both photoresist development and wafer cleaning?
Yes, the balanced ammonia concentration and ultra-low metal content make it suitable for both photoresist development in lithography processes and post-etch residue removal during wafer cleaning.
5. What analytical methods are used to verify the solution’s purity?
Each batch is analyzed using ICP-MS for metal impurities, ion chromatography for anionic contaminants, and particle counting via laser scattering to ensure compliance with VLSI-grade specifications.
