Description

Specifications Table

Product Material – High-purity copper probes, nickel-plated contacts
Grade – Research-grade, precision-engineered
Application – Resistivity measurement, band gap analysis, temperature-dependent studies

Product Overview

This complete four-probe semiconductor resistivity kit is designed for high-precision measurements of resistivity and band gap determination at varying temperatures. The setup features four high-purity copper probes with nickel-plated contacts to ensure minimal contact resistance and maximum accuracy. The system is engineered for research-grade applications, providing reliable data for temperature-dependent studies. The probes are arranged in a collinear configuration to eliminate measurement errors caused by probe spacing variations. The kit includes all necessary components for immediate use, including a temperature control module for thermal stability during experiments. The robust construction ensures durability, while the precision engineering guarantees consistent performance across repeated cycles. This setup is particularly valuable for experiments requiring accurate resistivity values and band gap calculations, making it an essential tool for advanced material characterization.

FAQs

1. What materials are used in the four-probe setup?

The probes are made from high-purity copper with nickel-plated contacts to ensure low contact resistance and high durability during measurements.

2. Can this kit measure resistivity at different temperatures?

Yes, the kit includes a temperature control module that allows resistivity measurements across a range of temperatures for comprehensive analysis.

3. Is this setup compatible with standard lab power supplies?

The system is designed to work with most standard DC power supplies, but always verify voltage and current requirements before use.

4. Are there alternatives for measuring band gap without this kit?

Alternative methods include optical absorption spectroscopy or Hall effect measurements, but the four-probe method offers higher accuracy for resistivity-based band gap determination.