Description
Specifications Table
Product Material – High-grade metal and fiberglass PCB
Grade – Educational/Research
Application – JFET/MOSFET characteristic analysis, transistor testing
Product Overview
The FET Characteristics Apparatus with Regulated Power Supplies is engineered for precise analysis of Field Effect Transistor (FET) behavior in laboratory settings. This apparatus integrates dual regulated DC power supplies (0-30V) to ensure stable voltage delivery during experiments, eliminating fluctuations that could distort measurements. The built-in digital meters provide real-time readings of drain current (ID), gate-source voltage (VGS), and drain-source voltage (VDS), enabling accurate plotting of transfer and output characteristics. The unit features a breadboard-compatible design with clearly labeled terminals for easy connection of external FETs, resistors, and other components. Safety is prioritized with short-circuit protection and insulated banana sockets. The apparatus supports both N-channel and P-channel FET testing, making it versatile for comparative studies. Its compact yet durable construction uses corrosion-resistant metal housing and high-quality PCB materials to withstand frequent use in academic and research environments. The included instructional manual provides circuit diagrams and step-by-step procedures for common FET experiments, though the unit’s intuitive layout allows for quick setup even without prior experience.
FAQs
1. What type of FETs can be tested with this apparatus?
This apparatus supports testing of both JFETs (Junction Field Effect Transistors) and MOSFETs (Metal-Oxide-Semiconductor FETs), including N-channel and P-channel variants. The regulated power supplies accommodate the voltage requirements for most small-signal FETs used in educational experiments.
2. Is this apparatus compatible with oscilloscopes for dynamic testing?
Yes, the apparatus includes test points that allow connection to external measurement devices like oscilloscopes or multimeters. The terminals are designed to work with standard 4mm banana plugs or crocodile clips for versatile connectivity during dynamic signal analysis.
3. What’s the difference between this and a transistor characteristic apparatus?
Unlike BJT (Bipolar Junction Transistor) characteristic apparatuses that measure base/current relationships, this FET-specific unit focuses on voltage-controlled behavior. It emphasizes gate-source voltage (VGS) effects on drain current (ID) rather than base current, with dedicated circuits for plotting FET transfer characteristics and square-law region analysis.
4. How should this apparatus be stored when not in use?
Store the unit in a dry environment with the power switch turned off. Cover the terminals with the included dust caps to prevent oxidation, and avoid stacking heavy items on top. For long-term storage, place silica gel packets near the apparatus to control humidity and prevent component degradation.
5. Can this replace a semiconductor parameter analyzer in research?
While this apparatus provides fundamental FET characterization capabilities, it’s not a substitute for high-end semiconductor parameter analyzers used in advanced research. It’s optimized for educational demonstrations and basic research applications where precision within ±5% tolerance is acceptable for teaching purposes.
